Details

Project TitleSelf-Assembled Nanodielectrics (SANDs) with Improved Leakage Protection for High Performance Semiconductor Devices
Track Code2006-042
Short Description

Novel SAND organic dielectrics suitable for high-performance III-V semiconductor devices such as metal-insulator-semiconductor field effect transistors (MISFETs) 

#materials #semiconductor #component

Abstract

Northwestern researchers have developed novel organic self-assembled nanodielectrics (SAND) suitable for high-performance III-V semiconductor devices such as metal-insulator-semiconductor field effect transistors (MISFETs). Replacing traditional Si or strained Si with III-V compound semiconductors as conduction channels continues to be an active research frontier because of their excellent electrical properties of these semiconductors. However, the principle obstacle to the II-V compound semiconductors has typically been the want of high quality, thermodynamically stable insulators on GaAs or III-V materials in general. Here, gallium arsenide (GaAs) MISFETs with excellent performance have been fabricated using very thin self-assembled nanodielectrics (SANDs) as the insulating layer. SANDs are effective insulators in organic thin-film transistors (OTFTs) affording excellent leakage current density (~ 10-9 A/cm2, SiO2 on Si), capacitance (~0.025 pF/m²) and dielectric (k~16) properties. They are readily processed and amenable to standard microelectronic techniques.

 
TagsMATERIALS: semiconductor, SEMICONDUCTOR: component
 
Posted DateJul 1, 2011 5:06 PM

Inventor(s)

Tobin Marks* 

Antonio Facchetti
Gang Lu
Peide Ye

Han Chung Lin

Applications

Dielectric materials for high-performance III-V semiconductor devices

Advantages

• Excellent leakage current density, capacitance and dielectric properties
• Readily processable
• Amenable to microelectronic techniques

Publication

IP Status

Issued US Patent No. 7,633,130

Contact Information

Zach Brown, PhD
Invention Associate
(p) 847-491-4629 
(e) Zachary.Brown@northwestern.edu